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    Suzhou Electric Appliance Research Institute
    期刊號: CN32-1800/TM| ISSN1007-3175

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    一種提高逆變電源功率密度的有效策略

    來源:電工電氣發(fā)布時間:2017-04-21 13:21 瀏覽次數:3
    一種提高逆變電源功率密度的有效策略
     
    王雪鈺1,楊洋2
    (1 南京鐵道職業(yè)技術學院,江蘇 南京 210031;2 南京南瑞繼保電氣有限公司,江蘇 南京 210016)
     
        摘 要:研究并實現(xiàn)了一種提高逆變器功率密度的有效策略,該技術將較低開關頻率的單相全橋逆變器用相移載波SPWM 的方式串聯(lián)成級聯(lián)式逆變器,經諧波分析、計算機仿真以及原理樣機實驗,結果表明:該策略降低了對器件頻率特性的要求,減小了開關損耗;降低了輸出諧波含量,輸出濾波器體積顯著減小,電能質量好;樣機結構模塊化,輸入電壓和功率被若干模塊平分,器件電壓應力小,且實現(xiàn)了分布式電能變換,可靠性高。
        關鍵詞:高功率密度;級聯(lián)逆變器;相移載波;模塊化
        中圖分類號:TM464     文獻標識碼:A      文章編號:1007-3175(2017)04-0026-05
     
    A Kind of Effective Strategy for Improving Power Density of Inverter
     
    WANG Xue-yu1, YANG Yang2
    (1 Nanjing Institute of Railway Technology, Nanjing 210031, China; 2 Nari-Relays Electric Co., Ltd, Nanjing 210016, China)
     
        Abstract: This paper researched and realized a kind of effective strategy for improving power density of inverter. The lower switching frequency single phase full bridge inverter adopted the phase shift carrier sinusoidal pulse width modulation (SPWM) technology to connect the inverters in series. The results of harmonic analysis, computer simulation and principled sample machine experiment show that this strategy reduces the requirements of devices frequency characteristics, switching losses, harmonic contents of output and output filter volume with good power quality. The prototype structure is modularized, the input voltage and power are divided equally by some modules and the device voltage stress is small, which realizes the conversion of distributed power energy with high reliability.
        Key words: high power density; cascade inverter; phase shift carrier; modularization
     
    參考文獻
    [1] 朱軍衛(wèi). 級聯(lián)型相移載波SPWM逆變器的研究[D].南京:南京航空航天大學,2004.
    [2] 王雪鈺,陳軼涵,鄧翔,等. 高功率密度1 kVA航空靜止變流器[J]. 南京航空航天大學學報,2014,46(1):137-143.
    [3] RODRIUGEZ J, LAI J S, PENG F Z.Multilevel Inverters: a Survey of Topologies, Controls, and Applications[J].IEEE Transactions on Industrial Electronics,2002,49(4):724-738.
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